Charged particle beam apparatus

ABSTRACT

The charged particle beams is provided, which can analyze contamination of the inner wall of the system without being disassembled and supply information on appropriate maintenance timing. The contamination level of the inner wall of the system is identified by measuring the spectrum of the X-rays emitted from the inner wall due to irradiation of a charged particle beam or a recoil electron.

RELATED APPLICATIONS

This application is a divisional of application Ser. No. 10/902,255,filed Jul. 30, 2004 now U.S. Pat. No. 7,064,324, which claims priorityof Japanese Application No. 2003-203801, filed Jul. 30, 2003, thecontents of which are hereby incorporated by reference.

TECHNICAL FIELD

The present subject matter relates to techniques and equipment usingcharged particle beams, including: an electron beam lithography systemthat uses electron beams to draw (logic) circuit patterns onsemiconductor wafers or the like, an electron microscope that useselectron beams to obtain enlarged images of objects, and other systemsthat use electron beams or ion beams.

BACKGROUND

There are several problems relating to the systems using chargedparticle beams, such as an electron microscope and an electron beamlithography system. Each system internally has a beam source forgenerating a charged particle beam such as an electron beam or ion beam,thin down the charged particle beam into a smaller diameter by usingelectromagnetic lenses and the like, and irradiate the charged particlebeam onto a target. One problem is that there is the necessity forperiodic maintenance due to contamination of the inner wall of a beamduct in which the charged particle beam is to travel. Other elements ofthe system also may need periodic decontamination.

The charged particle beam is irradiated onto a target usingelectromagnetically formed electron optics or ion beam optics (chargedparticle optics), and the duct in which the charged particle beam is totravel needs to be maintained in a vacuum to ensure a high mean freepass for the charged particle beam. For this reason, the components ofthe charged particle optics, such as electromagnetic lenses, permanentmagnet lenses, electric/magnetic deflectors, and elements havingapertures, are arranged on the periphery of, or partly inside, a vacuumchamber.

Although this vacuum vessel is maintained in a vacuum during theoperation of the system using charged particle beams, the performancelimits of vacuum pumps make it difficult to completely removeoil-containing or other residual gases or degas the charged particlebeam target. Continued operation of the system causes a highly reactivepart of molecules (radicals) or the like due to interactions between theresidual gases and the charged particles, and thus contaminates theinner wall of the vacuum vessel and other internal structures of thesystem. The effects of contamination with the hydrocarbon heavilycontained in the residual gases are particularly significant, and thehydrocarbon causes the contamination to accumulate on the internalcomponents of the vessel.

The charged particle beam has a charge and is therefore deflected by anelectromagnetic field. However, the charged particle beam issignificantly affected by internal contamination of the vacuum vessel,in particular. This event is considered to be due primarily to the factthat the formation of insulation films on the surfaces of metalliccomponents due to the contamination produces a residual charge due to arecoil electron or the like and thus causes a local electric field to beformed. To stabilize the course of the charged particle beam andmaintain system performance, therefore, it is essential to maintain thecleanliness of the elements having apertures of the system, the elementshaving apertures periphery, and other sections, by cleaning each ofthese elements periodically or replacing parts. Such maintenance isparticularly important for the system internal structures disposed atthe positions near the beam duct where recoil electrons concentrate.

To clean the system interior, however, it is necessary in most cases tostop the vacuum pumps and then introduce the atmosphere into the systembefore disassembling it, and for this reason, normal operation of thesystem needs to be stopped. It is desirable that the use of such aprocedure be avoidable, since this procedure not only requires greatamounts of expenses, but also incites a decrease in productivity due toa decrease in system availability according to the particular shutdownperiod of the system. A system that allows internal contamination to beremoved by introducing a gas without disassembling the system (refer to,e.g., Japanese Patent Laid-open No. 9-245716), and a system that retardscontamination by forming a catalyst on an inner wall (refer to, e.g.,Japanese Patent Laid-open No. 2002-248338), are known as conventionalsystems using charged particle beams. However, if the frequency ofsystem cleaning can be reduced by examining the degree of contamination,great contributions can be made to the improvement of productivity.

SUMMARY

Although, above prior art techniques can remove or control thecontamination, it can not confirm an extent of contamination or when thecleaning of the internal structure in the charged particle beamapparatus needed without dismantling the charged particle beamapparatus.

An object is to provide: a charged particle beam system that can analyzethe contamination of the internal structures or confirm an appropriatemaintenance timing without being disassembled.

In order to analyze the contamination of the internal structure withoutbeing disassembled, an X-ray emitted from an internal structure of acharged particle beam apparatus with irradiation of charged particlebeam, and the detected X-ray is analyzed whether a characteristic X-rayof a contaminant is comprised.

A charged particle beam apparatus comprising: a charged particle gun foremitting a charged particle beam, a converging lens for converging thecharged particle beam, a specimen stage for putting a specimen on, adeflector for deflecting the charged particle beam to an inner structureof a vacuum chamber in the charged particle beam apparatus, an X-raydetector for detecting X-ray emitted from an inner structure of thecharged particle beam apparatus, and a processor for analyzing thedetected X-ray to determined if the detected X-ray comprises acharacteristic X-ray of a contaminant.

According to above subject matter, the contamination adhered to theinner structure can be detected by detecting the characteristic X-ray ofthe contaminant material, as distinct from the inner structure.

Furthermore another object is to provide a charged particle beamapparatus that can confirm an appropriate maintenance timing withoutbeing disassembled without dismantling the charged particle beamapparatus. In order to confirm the maintenance timing, an X-ray radiatedfrom an internal structure of a charged particle beam apparatus withirradiation of charged particle beam is detected, and a warning forencouraging cleaning or changing the inner structure of the chargedparticle beam is issued when a value of a characteristic X-ray regardingto a contamination exceeds a predetermined value.

According to above subject matter, an operator can judge when thecleaning of the inner structure should be done.

The further detailed composition and effects of the present subjectmatters are made obvious in the following description of exemplaryembodiments.

BRIEF DESCRIPTION OF THE DRAWINGS

The drawing figures depict one or more implementations in accord withthe present concepts, by way of example only, not by way of limitations.In the figures, like reference numerals refer to the same or similarelements.

FIG. 1 is a longitudinal sectional view showing schematically anelectron beam lithography system;

FIGS. 2A to 2C are schematic diagrams explaining how an atom of thesubstance to which an electron beam has been irradiated emits acharacteristic X-ray;

FIG. 3 is a diagram showing the X-ray energy spectrum obtained;

FIGS. 4A to 4D are diagrams showing the difference between the X-rayenergy spectrum obtained when contamination is present on the metallicwall used in the embodiment of the present invention, and the X-rayenergy spectrum obtained when contamination is not present on themetallic wall;

FIGS. 5A to 5C are longitudinal sectional views of a system usingcharged particle beams, explaining the procedure and method forsearching for contamination of the inner wall of the system by using aspecial-purpose deflector;

FIG. 6 is a diagram showing the unit for detecting the X-ray generatedby irradiation of a charged particle beam to an internal structure ofthe system used, and the X-ray generated by the electron produced by theabove irradiation; and

FIG. 7 is a schematic diagram showing the configuration of a systemwhich transmits to an operator or the like the characteristic X-rayintensity information obtained in one embodiment.

DETAILED DESCRIPTION

In the following detailed description, numerous specific details are setforth by way of examples in order to provide a thorough understanding ofrelevant teaching. However, it should be apparent to those skilled inthe art that the present teaching may be practiced without such details.In other instances, well known methods, procedures, components, andcircuitry have been described at a relatively high-level, withoutdetail, in order to avoid unnecessarily obscuring aspects of the presentconcepts.

FIG. 1 is a longitudinal sectional view representing the schematicconfiguration of an electron beam lithography system as an example of asystem or apparatus which uses charged particle beams. In FIG. 1,numeral 6 denotes electron optics having a function which generates andconverges electron beams. After being generated by an electron gun 101,an electron beam 3 is first accelerated to an energy of several tens ofelectron volts, depending on a particular electrical potentialdifference with respect to an anode 102. Next, the electron beam 3 isshaped and thinned down into a smaller diameter by elements 104, 106 forpassing a part of the electron beam 3, and for limiting the other partof the electron beam 3 passing, and electromagnetic lenses 103, 105,107, then deflected by an electron beam deflector 108, and irradiatedonto a target 1 as a specimen to draw circuit patterns or the likethereon.

The target 1 is fixed to a target-holding unit 109 as a specimen stagewithin a target device 7 including a target chamber, and can be moved ina horizontal direction on a target-moving unit 110. The target isautomatically replaceable with another replacement target 111 set in atarget changer 8 which includes a target loader, and patterns can becontinuously drawn on a plurality of targets. Electron optics 6, thetarget device 7, the target changer 8, etc. are controlled by a controlcomputer 9 so as to allow unattended operation of the system. As abovedescribed, various inner structures compose of the charged particle beamapparatus in vacuum chamber of the charged particle beam apparatus.

The electron beam that has been generated by the electron gun 101 isattracted to the anode 102 having a plus electrical potential. Theelectron beam is then introduced by the electromagnetic lens 103, theelement 104, the electromagnetic lens 105, the element 106, theelectromagnetic lens 107, and the electron beam deflector 108, in thatorder, so as to be irradiated onto the target 1. These elements 104 and106 have apertures for limiting the charged particle beam passing andare arranged between the electron gun 101 and the target holding unit109.

The flow of control information from the control computer 9 to theelectron beam lithography system is as shown by an arrow 112. Thecontrol computer 9 has a processor which controls the charged particleapparatus built-in. The computer performs a sequence of operationsaccording to executable code embodied in a readable medium, when theprogram is installed in the control computer 9. As described later, thecomputer analyzes a characteristic X-ray.

Aspects of the methods outlined above may be embodied in software, e.g.in the form of program code executable by the computer or otherprogrammable device 5. Such software typically is carried on orotherwise embodied in a medium or media. Terms such as “readable medium”used herein refer to any medium that participates in providing one ormore instructions and/or data to a programmable processor, such as a CPUfor execution or other processing.

In this process, an X-ray 4 is emitted from the element 106 due to theirradiation of the electron beam 3. The X-ray 4 is detected by an X-raydetector 2 and then as shown by an arrow 113, sent to an X-ray energyspectrum analyzer 5. The X-ray energy spectrum analyzer 5 converts X-rayanalysis signals into an energy distribution and sends the informationthus obtained, to the control computer 9.

The X-ray detector 2 and the X-ray energy spectrum analyzer 5 arecollectively referred to as an X-ray detection means. For example, theX-ray detector 2 is arranged for detecting the X-ray radiated from theelement 106, or arranged on the electron gun 1 side against the element106.

The target-moving unit 110 moves in directions of arrows 114 and 115,both of which denote the operation of the target-moving unit, and thuschanges a position of the target 1 subjected to irradiation.

Next, a technique for analyzing a contamination level from the detectedX-ray is described below. FIG. 2 is a schematic diagram of the atomsgenerated when an electron beam is irradiated onto a target.

In FIG. 2A, an atom 201 is one of the atoms constituting the target, andelectrons 203, 204 are arranged around a nucleus 202. When theconstituting elements of the atom 201 are schematically represented inthis way, the orbit 205 closest to the nucleus is called the K-shell,and electrons 203 traveling round this orbit are referred to as theK-shell electrons. Likewise, other orbits are named the L-shell, theM-shell, etc. in order of proximity to the nucleus. Orbits down to theL-shell 206 and electrons down to L-shell electrons 204 are shown in thefigure.

A high-speed (high-energy) electron that is a portion of the electronbeam 3 irradiated onto the target 1 enters the atom. As shown in FIG.2B, in general, in a majority of systems using charged particle beams,including electron beam lithography systems, the irradiated electron 208has an energy great enough to excite the atom 207, regardless of itskind, and emit an X-ray. Furthermore, for almost all kinds of atoms,except for several kinds of particularly heavy atoms such as a uraniumatom, the above energy is great enough to make the K-shell electrons 203recoil. An atom 207 that has lost one K-shell electron 203 in the formof a secondary electron 209 by means of the incident electron 208 sooncaptures either of peripheral electrons 213 at the resulting vacancy ina K-shell 211 and emits differential energy in the form of anelectromagnetic wave as illustrated in FIG. 2C. An X-ray 212 includes awavelength indicates a character depending on a kind of materials. Ofall X-rays emitted from an atom, only those generated with the K-shelland other inner-shell electrons as its cause, are referred to as thecharacteristic X-rays of the atom. Numeral 210 denotes an atom thatemits characteristic X-rays, numeral 212 the characteristic X-raysemitted, numeral 213 an electron filling the resulting vacancy, andnumeral 214 a high-speed (high-energy) electron incident on the atom.

FIG. 3 is a conceptual diagram showing schematically the energy spectrumof the X-rays monitored. The X-ray spectrum obtained by irradiating anelectron beam onto a substance is composed of the continuous X-rays 301having an electron beam bremsstrahlung energy, and characteristic X-rayssuch as a sharply peaked X-ray 302 and an X-ray 303.

In the above-described beam source for generating characteristic X-rays,the energy or wavelength of the characteristic X-rays is characteristicof the kind of atom, and thus, the kind of atom emitting an X-ray can beidentified by measuring the wavelength of the characteristic X-rays.

Therefore, by checking the wavelength obtained of the characteristicX-rays against the atomic numbers of the atoms which constitute carbonand hydrogen or the inner wall (the inner wall forming the beam duct forthe charged particle beam), it is possible to examine whethercontamination is present and with approximately what density it ispresent. The accumulation level of the contamination can thus beidentified without shutting down the electron beam lithography system.

For example, in case of the different atoms from materials consisting ofthe inner structure in the vacuum chamber different X-ray spectra aredetected, and there is a possibility that the contamination adheres tothe inner structure. Therefore it is possible to check an existence ofcontamination being not same element as the inner structure.

The identification of contamination is described below. In FIGS. 4A and4C, an electron 404 and electrons 407, respectively, are irradiated ontoa metallic wall surface 401. If the wall surface 401 is dirty withcontamination 402 as shown in FIG. 4C, when the energy spectra of theX-ray 403 and X-rays 406 emitted are analyzed, an energy spectrum 405 ofthe X-ray emitted from a non-contaminated wall surface and an energyspectrum 408 of the X-rays emitted from the contaminated wall surfaceassume different aspects. These states are shown in FIGS. 4B and 4D,respectively, and the difference between the two types of spectra is dueto the fact that the constituting atoms differ in atomic number betweenthe irradiated substances. More specifically, the peak energy of thecharacteristic X-rays of contaminant 402 appears as a new peak 409 at aposition different from the peak of the spectrum 405 produced by thewall 401 alone. Since the energy of the peak 409 is univocallydetermined by the atomic numbers of the substance, the atomic numbers ofthe contamination and its quantity can be identified from the positionand height of the peak 409.

An object in this case is to identify the appropriate maintenance timingfor the elements, the deflector, and the parts constituting the innerwall of the beam duct, and perform the appropriate maintenance. To linkidentification information on maintenance timing and information on thecontamination detected by means of X-rays, it is useful to obtaininformation for judging at what level of what peak of the spectrum anynecessary part replacements are to be performed, and information forjudging what parts at what positions of the system are to undergo themaintenance.

The former of the above two judgments can be based on the systemperformance analyzed using other measuring means. For an electron beamlithography system, for example, an experimental system is firstoperated until the local position accuracy of the electron beam hasdecreased, then the X-ray spectrum under this state is acquired, and areference ratio between the peak height of the contamination and thepeak height depending on the type of metal is created. For a system thatis to be operated as an practical product, both sets of informationmentioned above can be used to replace parts before the local positionaccuracy decreases, and also to make a distinction between performancedeterioration due to contamination and performance deterioration causedby other factors. For example, a predetermined value was determined inadvance, and then upon detecting the peak height exceeding thepredetermined value, it is possible to warn for encouraging cleaning orchanging the inner structure of the charged particle beam. The warninglets an operator know the maintenance timing with a display or sound.

The latter judgment is described next. The criteria for judging whatparts are to undergo maintenance can likewise be derived using anexperimental system. At the same time, however, what positions on theinner wall of the system are significantly contaminated can also bedetected by using a special-purpose charged particle deflector providedin the system or by diverting to that purpose a charged particledeflector equipped for other purposes.

Examples of using a special-purpose deflector are shown in FIG. 5. Thesystems using charged particle beams, shown in FIGS. 5A, 5B and 5C, areidentical ones.

The beam passage for the charged particle beam is formed with an innerwall 502 along an optical axis of the charged particle beam, in whichare arranged an electron gun 101 (charged particle source), a element106, an electron beam deflector 108, and a special-purpose electron beamdeflector 501. An electron beam (charged particle beam) 3 that has beenemitted from the electron gun 101 is irradiated onto a target throughthe beam duct. In the beam duct, the electron gun 101, the element 106,and the electron beam deflector 108 can also be arranged so that partthereof faces in parallel to a traveling direction of the electron beam.The beam duct is maintained in a high degree of vacuum to ensure thatthe charged particle beam properly reaches the target withoutattenuating.

The charged particle beam 3 is deflected using the special-purposeelectron beam deflector 501, and then irradiated onto the inner wall 502or the element 106. By monitoring with a detector 2 the X-ray 4 emittedfrom the inner wall 502 or the element 106, it is possible to identifywhether the irradiated section is contaminated and at what position thecontamination (if detected) is significant, and therefore to judgewhether the component of that section is to undergo maintenance.Information that has thus been obtained becomes even more effective whenused in conjunction with the information that represents therelationship between contamination and performance.

As described above, the contamination of components at any positioninside the system can be detected using a special-purpose deflector or adeflector sharable with other elements. However, even when no suchdeflector is used and the system is in an operating state, approximateinformation on contamination can likewise be obtained by using an X-raydetector placed at an appropriate position in the system.

This detection means is described below using FIG. 6.

FIG. 6 shows an electron beam lithography system when it is inoperation, and this figure, unlike FIG. 1, represents an electron beam 3realistically so that it has a spatial spread. In general, in a systemusing charged particle beams, a generated electron beam is collimated inseveral split phases by use of elements having an aperture for passageof the beam and the remaining particles of the electron beam areirradiated onto a target. This also applies to FIG. 6, in which theelectron beam 3 is collimated into an electron beam 602 by an element601.

In addition, a unit called the “blanker” is equipped to turn beamirradiation onto the target on and off at high speed, and electron beamcomponents not irradiated onto the target are deflected and irradiatedto a specific collimating section inside the system and stopped there.In FIG. 6, how the electron beam is stopped by a blanker 604 via anelement 603 is schematically represented. By using an X-ray detector toanalyze the X-rays emitted from the system during operation, theseelectron beam irradiation sections such as the elements having anaperture for passage of the beam can be checked for contamination.

The internal components of the system that undergo irradiation of anelectron beam during the operation of the system usually become hot andare located near a passageway of the electron beam. Therefore, thesecomponents are highly prone to, and most significantly affected by,contamination, and are thus appropriate as the sections to be subjectedto contamination monitoring based on characteristic X-ray analyses.

In addition, it is more or less meaningful to perform characteristicX-ray analyses on sections other than the elements having an aperturefor passage of the beam, i.e., sections not directly undergoingirradiation of the electron beam during the operation of the system. InFIG. 6, the elements having an aperture for passage of the beam thathave undergone the irradiation of the charged particle beam reflectelectrons, called “recoil electrons”, to the periphery. These electronsare generated by the scattering of the electrons contained in the atomsof the beam-irradiated substance, or by, when the irradiated chargedparticle beam is an electron beam, the reflection of an incidentelectron by an atom present inside the irradiated substance. There arenot few cases in which these secondary electrons each have energy largeenough to generate an X-ray in the internal structure of the system,around the elements having an aperture for passage of the beam. ThisX-ray can also be used to perform contamination checks on the systeminternal structure around the elements having an aperture for passage ofthe beam. FIG. 6 shows how a recoil electron 605 is generated by theirradiation of the electron beam 602 onto the element 603 and collideswith the inner wall of the beam duct in order for an X-ray 607 to beemitted. In an actual system, the intensity of the X-ray emitted fromthe element having an aperture for passage of the beam itself is veryhigh, in other words, the secondary electrons are smaller than theprimary charged particle beam in terms of energy and quantity.Therefore, care is required so that the X-ray emitted from a specificsection, not the X-ray emitted from the element 603, will be detectedusing an X-ray collimator 606 or the like.

The use of the contamination information mentioned above makes itpossible to realize a system that constantly monitors itself andnotifies an operator of its own states. This system is described belowin line with a block diagram of FIG. 7.

For a system 701 that uses charged particle beams, in which an X-raydetector 2 is equipped as a contamination-monitoring unit, data on thepeaks of characteristic X-rays associated with a specific type ofcontamination is constantly acquired and energy-spectral distributioncurves are created at fixed time intervals using a detector 2. If afixed amount of energy is exceeded on these curves, indicationinformation 706 indicating that maintenance is required (i.e.,maintenance information displayed on a display unit of a controlcomputer 9) will be transmitted to the operator through aspecial-purpose signal machine 702 (for specifying maintenance timing tothe operator) or the control computer 9.

An arrow 707 schematically represents the flow of information from anX-ray energy spectrum analyzer 5 to the system component which specifiesmaintenance timing to the operator. An arrow 708 schematicallyrepresents the flow of information from the X-ray detector to the X-rayenergy spectrum analyzer 5. An arrow 709 schematically represents theflow of information from the X-ray energy spectrum analyzer to thecontrol computer 9. An arrow 710 schematically represents in collectiveform the flow of control information between the control computer andthe system which uses charged particle beams, and the flow of variousinformation on the current state of the system. An arrow 711schematically represents the flow of information from the X-ray energyspectrum analyzer to an information device which transmits maintenancetiming information.

For the detector, part of its function set can also be included in thecontrol computer 9. In addition, information can be sent directly to aserviceman or the like through, as another information transmissionroute, an information device 703 transmitting maintenance timinginformation and information transmitting paths 704, such as the Internetor wireless (i.e., a thunderbolt-shaped image 704 schematicallyrepresenting the Internet, wireless or other information routes). Theserviceman has a hand-held type of receiving device 705 for themaintenance timing information possessed by a person at a locationremote from a special device for a serviceman or the like.

Contamination checking with a special-purpose or other-purpose chargedparticle deflector can be periodically executed as a “contaminationchecking process”, whereby it also becomes possible to realize a systemcapable of obtaining further detailed contamination information.

As set forth above, according to the present embodiment, in an electronbeam lithography system, it is possible to monitor the accumulationlevel of contamination on the inner wall of the system withoutdisassembling it and identify appropriate maintenance timing, and thusfacilitating the maintenance. Since the maintenance can be performed inappropriate timing, it is possible to provide an electron beamlithography system operating with high efficiency or a highly efficientlithography method.

According to the present invention, by analyzing characteristic X-rays,the contamination of the inner wall of a system which uses chargedparticle beams can be detected without disassembling the system, andthus, maintenance of the system can be easily performed.

While the invention has been described in its preferred embodiments, itis to be understood that the words which have been used are words ofdescription rather than limitation of information from the X-ray energyspectrum analyzer to an information device which transmits maintenancetiming information.

For the detector, part of its function set can also be included in thecontrol computer 9. In addition, information can be sent directly to aserviceman or the like through, as another information transmissionroute, an information device 703 transmitting maintenance timinginformation and information transmitting paths 704, such as the Internetor wireless (i.e., a thunderbolt-shaped image 704 schematicallyrepresenting the Internet, wireless or other information routes). Theserviceman has a hand-held type of receiving device 705 for themaintenance timing information possessed by a person at a locationremote from a special device for a serviceman or the like.

Contamination checking with a special-purpose or other-purpose chargedparticle deflector can be periodically executed as a “contaminationchecking process”, whereby it also becomes possible to realize a systemcapable of obtaining further detailed contamination information.

As set forth above, according to the present embodiment, in an electronbeam lithography system, it is possible to monitor the accumulationlevel of contamination on the inner wall of the system withoutdisassembling it and identify appropriate maintenance timing, and thusfacilitating the maintenance. Since the maintenance can be performed inappropriate timing, it is possible to provide an electron beamlithography system operating with high efficiency or a highly efficientlithography method.

According to the present invention, by analyzing characteristic X-rays,the contamination of the inner wall of a system which uses chargedparticle beams can be detected without disassembling the system, andthus, maintenance of the system can be easily performed.

While the invention has been described in its preferred embodiments, itis to be understood that the words which have been used are words ofdescription rather than limitation and that changes within the purviewof the appended claims may be made without departing from the true scopeand spirit of the invention in its broader aspects.

1. A charged particle beam apparatus comprising: a charged particle gunfor emitting a charged particle beam, a converging lens for convergingthe charged particle beam, a specimen stage for putting a specimen on,an element having an aperture for passage of the beam, arranged betweenthe charged particle gun and the specimen stage, and an X-ray detectorfor detecting X-ray radiated from the aperture by irradiation thecharged particle beam to the aperture.
 2. A charged particle beamapparatus according to claim 1, further comprises a processor foranalyzing a characteristic X-ray included the X-ray radiated from theaperture.
 3. A charged particle beam apparatus according to claim 2,wherein the processor detects whether the characteristic X-ray isregarding to atoms consist of the aperture or not.
 4. A charged particlebeam apparatus according to claim 1, wherein the charged particle beamis an electron beam or an ion beam.
 5. A charged particle beam apparatusaccording to claim 1, further comprises an inner structure comprising awall of a vacuum chamber of the charged particle beam apparatus.